IRGP430U ultrafast igbt insulated gate bipolar transistor parameter min. typ. max. units r q jc junction-to-case ------ ------ 1.2 r q cs case-to-sink, flat, greased surface ------ 0.24 ------ c/w r q ja junction-to-ambient, typical socket mount ------ ------ 40 wt weight ------ 6 (0.21) ------ g (oz) features ? switching-loss rating includes all "tail" losses ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve v ces = 500v v ce(sat) 3.0v @v ge = 15v, i c = 15a e c g n-channel description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high-current applications. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 500 v i c @ t c = 25c continuous collector current 25 i c @ t c = 100c continuous collector current 15 a i cm pulsed collector current ? 50 i lm clamped inductive load current ? 50 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 10 mj p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) thermal resistance t o-247ac pd - 9.780
IRGP430U parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 31 47 i c = 15a q ge gate - emitter charge (turn-on) ---- 6.2 9.3 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 12 19 v ge = 15v t d(on) turn-on delay time ---- 29 ---- t j = 25c t r rise time ---- 11 ---- ns i c = 15a, v cc = 400v t d(off) turn-off delay time ---- 91 160 v ge = 15v, r g = 23 w t f fall time ---- 66 120 energy losses include "tail" e on turn-on switching loss ---- 0.24 ---- e off turn-off switching loss ---- 0.17 ---- mj see fig. 9, 10, 11, 14 e ts total switching loss ---- 0.41 0.61 t d(on) turn-on delay time ---- 13 ---- t j = 150c, t r rise time ---- 27 ---- ns i c = 15a, v cc = 400v t d(off) turn-off delay time ---- 130 ---- v ge = 15v, r g = 23 w t f fall time ---- 130 ---- energy losses include "tail" e ts total switching loss ---- 0.76 ---- mj see fig. 10, 14 l e internal emitter inductance ---- 13 ---- nh measured 5mm from package c ies input capacitance ---- 660 ---- v ge = 0v c oes output capacitance ---- 110 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 12 ---- ? = 1.0mhz notes: ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 w , ( see fig. 13a ) ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? repetitive rating; pulse width limited by maximum junction temperature. ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 500 ---- ---- v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 20 ---- ---- v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 0.46 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 2.3 3.0 i c = 15a v ge = 15v ---- 2.8 ---- v i c = 25a see fig. 2, 5 ---- 2.6 ---- i c = 15a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -11 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 2.3 8.1 ---- s v ce = 100v, i c = 15a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 500v ---- ---- 1000 v ge = 0v, v ce = 500v, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified)
fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics IRGP430U 0 10 20 30 40 0.1 1 10 10 0 load current (a) f, frequency (khz) 60% of rated voltage ideal diodes square wave: triangular wave: clamp voltage: 80% of rated for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 24w 1 10 100 11 0 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge 0.1 1 10 100 1000 5 10152 0 c i , col lector-to-emitter current (a) v , gate-to-emitter voltage (v) ge t = 25c t = 150c j j v = 100v 5s pulse width cc
fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGP430U fig. 6 - maximum effective transient thermal impedance, junction-to-case 0 5 10 15 20 25 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 16 0 t , case temperature (c) c ce v , collector-to-emitter v oltage (v ) v = 15v 80s pulse width ge i = 30a i = 15a i = 7.5a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 jdmthjc c
IRGP430U fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 0.38 0.40 0.42 0.44 0.46 0.48 0 102030405060 g total switching losses (mj) r , gate resistance ( ) w w v = 400v v = 15v t = 25c i = 15a cc ge c c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 16 0 c t , case temperature (c) r = 50 v = 15v v = 400v total switching losses (mj) g ge cc w i = 30a i = 15a i = 7.5a c c c 0 200 400 600 800 1000 1200 1400 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 10203040 ge v , gate-to-emitter voltage (v) q , total gate charge (nc) g v = 400v i = 15a ce c
IRGP430U fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 d imen sio ns & t oler anc in g per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d imen sio ns ar e sh ow n millimete rs (in ch es). 4 c on fo rm s to jed ec ou tlin e t o-247ac . lead assignments 1 - gat e 2 - co llec to r 3 - emit ter 4 - co llec to r * longer leaded (20m m) version available (to-247ad) to orde r add "-e " suff ix to part number 0.0 0.4 0.8 1.2 1.6 2.0 0 1020304 0 c total switching losses (mj) i , collector-to-emitter current (a) r = 23 t = 150c v = 400v v = 15v w g c cc ge 1 10 100 1 10 100 100 0 c ce i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j v , collector-to-emitter voltage (v) a
400v 4 x i c @ 25c IRGP430U d.u.t. 50v l v * c ? ? ? ? * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will incr ease to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 400v r l = t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v ? ? ? ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 400v
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